Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
-
Application No.: US12923497Application Date: 2010-09-24
-
Publication No.: US08012829B2Publication Date: 2011-09-06
- Inventor: Kyung Joong Joo , Han Soo Kim
- Applicant: Kyung Joong Joo , Han Soo Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0044832 20060518
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
Example embodiments are directed to a method of manufacturing a semiconductor device and a semiconductor device including a substrate including a plurality of active regions and a plurality of isolation regions between adjacent active regions, each active region including a groove, a bottom surface of the groove being below an upper surface of the active region.
Public/Granted literature
- US20110014758A1 Semiconductor device and method of manufacturing the same Public/Granted day:2011-01-20
Information query
IPC分类:
