Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11966421Application Date: 2007-12-28
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Publication No.: US08012833B2Publication Date: 2011-09-06
- Inventor: Song Hyeuk Im
- Applicant: Song Hyeuk Im
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: KR10-2007-0094059 20070917
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A method for fabricating a semiconductor device includes forming an insulating pattern over a semiconductor substrate. An epitaxial growth layer is formed over the semiconductor substrate exposed by the insulating pattern to fill the insulating pattern with the epitaxial growth layer. A recess gate having a recess channel is formed. The recess channel is disposed between two neighboring insulating patterns.
Public/Granted literature
- US20090072344A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2009-03-19
Information query
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