Invention Grant
- Patent Title: Isolation structures and methods of fabricating isolation structures
- Patent Title (中): 隔离结构和制造隔离结构的方法
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Application No.: US11462571Application Date: 2006-08-04
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Publication No.: US08012846B2Publication Date: 2011-09-06
- Inventor: Cheng-Yuan Tsai , Chih-Lung Lin , Cheng-Chen Calvin Hsueh
- Applicant: Cheng-Yuan Tsai , Chih-Lung Lin , Cheng-Chen Calvin Hsueh
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
A method of forming an isolation structure includes the steps of: (a) forming an opening within a substrate; (b) forming a substantially conformal layer comprising tetraethoxysilane (TEOS) layer along the opening; and (c) forming a dielectric layer over the TEOS layer, the dielectric layer substantially filling the opening.
Public/Granted literature
- US20080032482A1 ISOLATION STRUCTURES AND METHODS OF FABRICATING ISOLATION STRUCTURES Public/Granted day:2008-02-07
Information query
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