Invention Grant
- Patent Title: Controlled process and resulting device
- Patent Title (中): 控制过程和结果设备
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Application No.: US12789361Application Date: 2010-05-27
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Publication No.: US08012852B2Publication Date: 2011-09-06
- Inventor: Francois J. Henley , Nathan W. Cheung
- Applicant: Francois J. Henley , Nathan W. Cheung
- Applicant Address: US CA San Jose
- Assignee: Silicon Genesis Corporation
- Current Assignee: Silicon Genesis Corporation
- Current Assignee Address: US CA San Jose
- Agency: Kilpatrick Townsend and Stockton LLP
- Main IPC: H01L21/30
- IPC: H01L21/30
Abstract:
A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
Public/Granted literature
- US20100282323A1 CONTROLLED PROCESS AND RESULTING DEVICE Public/Granted day:2010-11-11
Information query
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