Transistors with gate stacks having metal electrodes

Invention Grant

US08012863B2 Transistors with gate stacks having metal electrodes 有权

Title translation: 具有栅极堆叠的晶体管具有金属电极

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Patent Title: Transistors with gate stacks having metal electrodes
Patent Title (中): 具有栅极堆叠的晶体管具有金属电极
Application No.: US11306670

Application Date: 2006-01-06
Publication No.: US08012863B2

Publication Date: 2011-09-06
Inventor: Michael Patrick Chudzik , Paul Daniel Kirsch
Applicant: Michael Patrick Chudzik , Paul Daniel Kirsch
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agency: Schmeiser, Olsen & Watts
Agent Ian D. MacKinnon
Main IPC: H01L21/3205
IPC: H01L21/3205

Transistors with gate stacks having metal electrodes

Abstract:

A transistor with a gate stack having a metal electrode and a method for forming the same. The method includes providing a structure which includes (a) a substrate, (b) a gate dielectric layer on the substrate, and (c) a gate layer on the gate dielectric layer. The gate layer includes an oxidized layer. The oxidized layer comprises an oxidized material. Then, the structure is exposed to a first plasma resulting in removal of oxygen atoms from molecules of the oxidized material.

Abstract(Chinese):

具有栅叠层的晶体管具有金属电极及其形成方法。该方法包括提供一种结构，该结构包括（a）衬底，（b）衬底上的栅极介电层，和（c）栅极介电层上的栅极层。栅极层包括氧化层。氧化层包含氧化物。然后，该结构暴露于第一等离子体，导致从氧化材料的分子中除去氧原子。

Public/Granted literature

US20070161198A1 Transistors With Gate Stacks Having Metal Electrodes Public/Granted day:2007-07-12

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3205	......非绝缘层的沉积，例如绝缘层上的导电层或电阻层；这些层的后处理（电极的制造入H01L21/28）