Invention Grant
US08012865B2 High temperature, stable SiC device interconnects and packages having low thermal resistance
有权
具有低耐热性的高温，稳定的SiC器件互连和封装
- Patent Title: High temperature, stable SiC device interconnects and packages having low thermal resistance
- Patent Title (中): 具有低耐热性的高温，稳定的SiC器件互连和封装
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Application No.: US12683633Application Date: 2010-01-07
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Publication No.: US08012865B2Publication Date: 2011-09-06
- Inventor: Vivek Mehrotra
- Applicant: Vivek Mehrotra
- Applicant Address: US DE Wilmington
- Assignee: Astriphey Applications L.L.C.
- Current Assignee: Astriphey Applications L.L.C.
- Current Assignee Address: US DE Wilmington
- Main IPC: H01L21/58
- IPC: H01L21/58
Abstract:
A method of forming packages containing SiC or other semiconductor devices bonded to other components or conductive surfaces utilizing transient liquid phase (TLP) bonding to create high temperature melting point bonds using in situ formed ternary or quaternary mixtures of conductive metals and the devices created using TLP bonds of ternary or quaternary materials. The compositions meet the conflicting requirements of an interconnect or joint that can be exposed to high temperature, and is thermally and electrically conductive, void and creep resistant, corrosion resistant, and reliable upon temperature and power cycling.
Public/Granted literature
- US20100127046A1 HIGH TEMPERATURE, STABLE SIC DEVICE INTERCONNECTS AND PACKAGES HAVING LOW THERMAL RESISTANCE Public/Granted day:2010-05-27
Information query
IPC分类:
