Invention Grant
- Patent Title: Semiconductor device manufacturing method and semiconductor device manufacturing apparatus
- Patent Title (中): 半导体器件制造方法和半导体器件制造装置
-
Application No.: US12493818Application Date: 2009-06-29
-
Publication No.: US08012884B2Publication Date: 2011-09-06
- Inventor: Satoshi Yasuda , Shin-ichi Imai
- Applicant: Satoshi Yasuda , Shin-ichi Imai
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2008-173539 20080702
- Main IPC: H01L21/31
- IPC: H01L21/31 ; C23C16/00
Abstract:
A predicted film formation rate value is computed based on a film formation rate prediction formula obtained in advance and apparatus parameters obtained during a previously-performed film formation process. A processing time required for an amount of film formed on a wafer to reach a predetermined target film thickness is computed based on the computed predicted film formation rate value and the target film thickness. Then, according to the computed processing time, a film-formation process is performed on wafers. In addition, it is determined whether the computed predicted film formation rate value is within a predetermined range, and only when it is determined to be within the predetermined range, the film formation process may be performed.
Public/Granted literature
- US20100003831A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS Public/Granted day:2010-01-07
Information query
IPC分类:
