Invention Grant
US08012888B2 Substrate processing apparatus and semiconductor device manufacturing method 有权
基板加工装置及半导体装置的制造方法

  • Patent Title: Substrate processing apparatus and semiconductor device manufacturing method
  • Patent Title (中): 基板加工装置及半导体装置的制造方法
  • Application No.: US12223866
    Application Date: 2007-02-16
  • Publication No.: US08012888B2
    Publication Date: 2011-09-06
  • Inventor: Kenichi Ishiguro
  • Applicant: Kenichi Ishiguro
  • Applicant Address: JP Tokyo
  • Assignee: Hitachi Kokusai Electric Inc.
  • Current Assignee: Hitachi Kokusai Electric Inc.
  • Current Assignee Address: JP Tokyo
  • Agency: Oliff & Berridge PLC
  • Priority: JP2006-046855 20060223
  • International Application: PCT/JP2007/052824 WO 20070216
  • International Announcement: WO2007/099786 WO 20070907
  • Main IPC: H01L21/477
  • IPC: H01L21/477
Substrate processing apparatus and semiconductor device manufacturing method
Abstract:
Provided is a substrate processing apparatus comprising: a process chamber for processing a substrate; a heater for heating an interior of the process chamber; a holder for sustaining the substrate in the process chamber; and a substrate transfer plate for transferring the substrate to the holder; wherein the holder has a retainer for sustaining the substrate at its outer periphery and a main body for sustaining the retainer, a portion of the retainer extending at least from a back region thereof with respect to an inserting direction of the substrate transfer plate to a region adjacent thereto and to be sustained by the main body and lying outer than the substrate upon putting the substrate on the retainer being made thicker than other portions of the retainer.
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