Invention Grant
- Patent Title: Semiconductor apparatus and fabrication method of the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12370767Application Date: 2009-02-13
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Publication No.: US08013335B2Publication Date: 2011-09-06
- Inventor: Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
- Applicant: Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2002-305084 20021018
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L31/36 ; H01L31/376 ; H01L31/20

Abstract:
It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity.
Public/Granted literature
- US20090152539A1 Semiconductor Apparatus and Fabrication Method of the Same Public/Granted day:2009-06-18
Information query
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