Invention Grant
- Patent Title: Semiconductor device with semiconductor body and method for the production of a semiconductor device
- Patent Title (中): 具有半导体体的半导体装置及半导体装置的制造方法
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Application No.: US12242101Application Date: 2008-09-30
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Publication No.: US08013340B2Publication Date: 2011-09-06
- Inventor: Gerhard Schmidt
- Applicant: Gerhard Schmidt
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L29/04
- IPC: H01L29/04
Abstract:
A semiconductor device includes a semiconductor body with a front-sided surface. An active cell region with a semiconductor device structure and an edge region surrounding the active cell region are arranged in the semiconductor body. The front-sided surface of the semiconductor body includes a passivation layer over the edge region and over the active cell region. The passivation layer includes a semiconducting insulation layer of a semiconducting material, the bandgap of which is greater than the bandgap of the material of the semiconductor body.
Public/Granted literature
- US20100078756A1 SEMICONDUCTOR DEVICE WITH SEMICONDUCTOR BODY AND METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR DEVICE Public/Granted day:2010-04-01
Information query
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