Invention Grant
- Patent Title: Semiconductor devices and structures thereof
- Patent Title (中): 半导体器件及其结构
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Application No.: US12579807Application Date: 2009-10-15
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Publication No.: US08013364B2Publication Date: 2011-09-06
- Inventor: Markus Naujok , Hermann Wendt , Alois Gutmann , Muhammed Shafi Pallachalil
- Applicant: Markus Naujok , Hermann Wendt , Alois Gutmann , Muhammed Shafi Pallachalil
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/52
- IPC: H01L23/52

Abstract:
A structure having air gaps between interconnects is disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.
Public/Granted literature
- US20100032841A1 Semiconductor Devices and Structures Thereof Public/Granted day:2010-02-11
Information query
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