Invention Grant
- Patent Title: Structure and method for compact long-channel FETs
- Patent Title (中): 紧凑型长沟道FET的结构和方法
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Application No.: US11937161Application Date: 2007-11-08
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Publication No.: US08013367B2Publication Date: 2011-09-06
- Inventor: Bruce B. Doris , Carl J. Radens , Anthony K. Stamper
- Applicant: Bruce B. Doris , Carl J. Radens , Anthony K. Stamper
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Katherine S. Brown, Esq.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336
Abstract:
A compact semiconductor structure including at least one FET located upon and within a surface of a semiconductor substrate in which the at least one FET includes a long channel length and/or a wide channel width and a method of fabricating the same are provided. In some embodiments, the ordered, nanosized pattern is oriented in a direction that is perpendicular to the current flow. In such an embodiment, the FET has a long channel length. In other embodiments, the ordered, nanosized pattern is oriented in a direction that is parallel to that of the current flow. In such an embodiment, the FET has a wide channel width. In yet another embodiment, one ordered, nanosized pattern is oriented in a direction perpendicular to the current flow, while another ordered, nanosized pattern is oriented in a direction parallel to the current flow. In such an embodiment, a FET having a long channel length and wide channel width is provided.
Public/Granted literature
- US20090121261A1 STRUCTURE AND METHOD FOR COMPACT LONG-CHANNEL FETs Public/Granted day:2009-05-14
Information query
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