Invention Grant
- Patent Title: Solid-state imaging device
- Patent Title (中): 固态成像装置
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Application No.: US11249332Application Date: 2005-10-14
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Publication No.: US08013370B2Publication Date: 2011-09-06
- Inventor: Hiroshi Kobayashi , Katsuyoshi Yamamoto , Tadao Inoue , Toshitaka Mizuguchi
- Applicant: Hiroshi Kobayashi , Katsuyoshi Yamamoto , Tadao Inoue , Toshitaka Mizuguchi
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Fujitsu Patent Center
- Priority: JP2005-089268 20050325
- Main IPC: H01L31/062
- IPC: H01L31/062
Abstract:
A solid-state imaging device has a substrate in which are formed a pixel array portion having a plurality of pixels, and a peripheral circuitry portion. The device is characterized in that a first multilevel metallization structure is formed over the peripheral circuitry portion, and a second multilevel metallization structure thinner than the first multilevel metallization structure is formed over the pixel array portion.
Public/Granted literature
- US20060214195A1 Solid-state imaging device Public/Granted day:2006-09-28
Information query
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