A semiconductor device of the present invention has a first contact and a second contact which are located over a device isolation film so as to be opposed with each other, and have a length in the horizontal direction larger than the height; a first electro-conductive pattern located on the first contact and is formed in at least a single interconnect layer; a second electro-conductive pattern located on the second contact so as to be opposed with the first electro-conductive pattern; and an interconnect formed in an upper interconnect layer which is located above the first electro-conductive pattern and the second electro-conductive pattern, so as to be located in a region above the first electro-conductive pattern and the second electro-conductive pattern.