Invention Grant
- Patent Title: Semiconductor component and semiconductor device
- Patent Title (中): 半导体元件和半导体器件
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Application No.: US12636090Application Date: 2009-12-11
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Publication No.: US08013396B2Publication Date: 2011-09-06
- Inventor: Mizuki Ono
- Applicant: Mizuki Ono
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-052371 20090305
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/119 ; H01L27/088 ; H01L29/78
Abstract:
A semiconductor component includes a mixed crystal layer of silicon and germanium having a first main surface, containing a III-group impurity, and having a first face orientation alone represented as a face (11N) by using N satisfying 1.2
Public/Granted literature
- US20100224935A1 SEMICONDUCTOR COMPONENT AND SEMICONDUCTOR DEVICE Public/Granted day:2010-09-09
Information query
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