Invention Grant
US08013518B2 Top-emitting organic light emitting diode structures and fabrication method thereof 有权
发光有机发光二极管结构及其制造方法

  • Patent Title: Top-emitting organic light emitting diode structures and fabrication method thereof
  • Patent Title (中): 发光有机发光二极管结构及其制造方法
  • Application No.: US11002831
    Application Date: 2004-12-01
  • Publication No.: US08013518B2
    Publication Date: 2011-09-06
  • Inventor: Tze-Chien Tsai
  • Applicant: Tze-Chien Tsai
  • Applicant Address: TW Hsinchu
  • Assignee: Au Optronics Corp.
  • Current Assignee: Au Optronics Corp.
  • Current Assignee Address: TW Hsinchu
  • Agency: Thomas|Kayden
  • Priority: TW93123200A 20040803
  • Main IPC: H01L51/00
  • IPC: H01L51/00
Top-emitting organic light emitting diode structures and fabrication method thereof
Abstract:
Top-emitting organic light emitting diode (OLED) structures and fabrication method thereof. A first electrode is formed on a substrate. A dielectric layer including at least one first opening is formed on the first electrode. An organic emission layer is formed on the dielectric layer and fills the first opening. A second electrode including at least one second opening is formed on the organic emission layer. The second opening corresponds to the first opening.
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