Provided is a reference voltage circuit capable of generating a temperature-independent reference voltage more stably. Each of N-type metal oxide semiconductor (NMOS) transistors (1) and (2) has a source and a back gate that are short-circuited, and hence threshold voltages (Vth1) and (Vth2) of the NMOS transistors (1) and (2) respectively depend only on process fluctuations in the NMOS transistors (1) and (2) and not on process fluctuations in other elements. As a result, a temperature-independent reference voltage (Vref) may be generated more stably.