Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12654722Application Date: 2009-12-30
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Publication No.: US08013627B2Publication Date: 2011-09-06
- Inventor: Bong-Il Park
- Applicant: Bong-Il Park
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce
- Priority: KR10-2008-0138714 20081231
- Main IPC: H03K19/003
- IPC: H03K19/003
Abstract:
Provided is a semiconductor device and a method of fabricating the same. The semiconductor device may include at least one logic circuit and at least one spare circuit. The at least one spare circuit may be that is a substitute for the at least one logic circuit and may not be connected to a power voltage source and/or a ground voltage source.
Public/Granted literature
- US20100164537A1 Semiconductor device and method of fabricating the same Public/Granted day:2010-07-01
Information query
