Invention Grant
- Patent Title: CMOS input buffer circuit
- Patent Title (中): CMOS输入缓冲电路
-
Application No.: US12813031Application Date: 2010-06-10
-
Publication No.: US08013631B2Publication Date: 2011-09-06
- Inventor: Fumiyasu Utsunomiya
- Applicant: Fumiyasu Utsunomiya
- Applicant Address: JP
- Assignee: Seiko Instruments Inc.
- Current Assignee: Seiko Instruments Inc.
- Current Assignee Address: JP
- Agency: Brinsk Hofer Gilson & Lione
- Priority: JP2009-159128 20090703; JP2009-185083 20090807; JP2009-265455 20091120
- Main IPC: H03K19/0175
- IPC: H03K19/0175 ; H03L5/00

Abstract:
Provided is a complementary metal oxide semiconductor (CMOS) input buffer circuit that is capable of lower voltage operation with lower current consumption. The CMOS input buffer circuit includes: a depletion type NMOS transistor including a drain connected to a power supply terminal (VDD), and a gate connected to an output terminal; a PMOS transistor including a source connected to a source of the depletion type NMOS transistor, a drain connected to the output terminal, and a gate connected to an input terminal; and an NMOS transistor including a source connected to a reference terminal (GND), a gate connected to the input terminal, and a drain connected to the output terminal.
Public/Granted literature
- US20110001513A1 CMOS INPUT BUFFER CIRCUIT Public/Granted day:2011-01-06
Information query
IPC分类: