Invention Grant
- Patent Title: MOS integrated circuit and electronic equipment including the same
- Patent Title (中): MOS集成电路和电子设备包括相同
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Application No.: US12974577Application Date: 2010-12-21
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Publication No.: US08013639B2Publication Date: 2011-09-06
- Inventor: Masahiro Aoike
- Applicant: Masahiro Aoike
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2008-080873 20080326
- Main IPC: H03F3/45
- IPC: H03F3/45
Abstract:
A MOS integrated circuit includes: a voltage-to-current conversion circuit configured to convert first and second voltages to a first current having a current value corresponding to the first voltage and a second current having a current value corresponding to the second voltage; and a current comparison circuit configured to compare the respective current values of the first and second currents and to output a voltage showing the comparison result. Oxide films of MOS transistors of the current comparison circuit are thinner than oxide films of MOS transistors of the voltage-to-current conversion circuit.
Public/Granted literature
- US20110089976A1 MOS INTEGRATED CIRCUIT AND ELECTRONIC EQUIPMENT INCLUDING THE SAME Public/Granted day:2011-04-21
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