Invention Grant
- Patent Title: Apparatus and method for generating internal voltage in semiconductor integrated circuit
- Patent Title (中): 在半导体集成电路中产生内部电压的装置和方法
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Application No.: US12265918Application Date: 2008-11-06
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Publication No.: US08013662B2Publication Date: 2011-09-06
- Inventor: Gyo-Soo Chu
- Applicant: Gyo-Soo Chu
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Venable LLP
- Agent Jeffri A. Kaminski
- Priority: KR10-2006-0132540 20061222
- Main IPC: G05F1/10
- IPC: G05F1/10
Abstract:
An internal voltage generating apparatus includes: a voltage detector that detects the level of the internal voltage and outputs a fixed level detection signal and a variable level detection signal. An oscillation controller generates an oscillation enable signal according to whether the fixed level detection signal and the variable level detection signal are enabled. An internal voltage generator generates the internal voltage in response to the oscillation enable signal.
Public/Granted literature
- US20090066405A1 APPARATUS AND METHOD FOR GENERATING INTERNAL VOLTAGE IN SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2009-03-12
Information query
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