Invention Grant
- Patent Title: Broadband transition from a via interconnection to a planar transmission line in a multilayer substrate
- Patent Title (中): 从多孔衬底中的通孔互连到平面传输线的宽带转变
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Application No.: US12281460Application Date: 2007-03-02
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Publication No.: US08013685B2Publication Date: 2011-09-06
- Inventor: Taras Kushta , Kaoru Narita , Tomoyuki Kaneko , Shin-ichi Ogou
- Applicant: Taras Kushta , Kaoru Narita , Tomoyuki Kaneko , Shin-ichi Ogou
- Applicant Address: JP Kanagawa JP Tokyo
- Assignee: Renesas Electronics Corporation,NEC Corporation
- Current Assignee: Renesas Electronics Corporation,NEC Corporation
- Current Assignee Address: JP Kanagawa JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2006-058676 20060303
- International Application: PCT/JP2007/054621 WO 20070302
- International Announcement: WO2007/102597 WO 20070913
- Main IPC: H03H7/38
- IPC: H03H7/38

Abstract:
According to one embodiment, a broadband transition to joint a via structure and a planar transmission line in a multilayer substrate is formed as an intermediate connection between the signal via pad and the planar transmission line disposed at the same conductor layer. The transverse dimensions of the transition are equal to the via pad diameter at the one end and strip width at another end; The length of the transition can be equal to the characteristic dimensions of the clearance hole in the direction of the planar transmission line or defined as providing the minimal excess inductive reactance in time-domain according to numerical diagrams obtained by three-dimensional full-wave simulations.
Public/Granted literature
- US20090015345A1 BROADBAND TRANSITION FROM A VIA INTERCONNECTION TO A PLANAR TRANSMISSION LINE IN A MULTILAYER SUBSTRATE Public/Granted day:2009-01-15
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