Solid-state image sensors are disclosed that include one or more pixels formed on a semiconductor substrate. Each pixel includes a photoelectric converter to convert light to an electric signal, and a microlens above the photoelectric converter. The microlens has a plan profile in which the direct distance from a center to a lens edge is variable. The microlens has first base regions and second base regions not including the first base regions. The first base regions are provided near n positions (n being a natural number) of the lens edge from which the direct distance is relatively long. The vertical height of the first base regions from an upper surface of the photoelectric converter is less than the vertical height of the second base regions from the upper surface of the photoelectric converter.