Invention Grant
- Patent Title: Thin film transistor substrate and fabricating method thereof
- Patent Title (中): 薄膜晶体管基板及其制造方法
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Application No.: US12836369Application Date: 2010-07-14
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Publication No.: US08013974B2Publication Date: 2011-09-06
- Inventor: Ji Hyun Jung
- Applicant: Ji Hyun Jung
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Brinks Hofer Gilson & Lione
- Priority: KR10-2005-0135044 20051230
- Main IPC: G02F1/1345
- IPC: G02F1/1345
Abstract:
A thin film transistor substrate and a fabricating method that includes an opening hole that separates a gate shorting line connected to a gate shorting bar used upon a lighting-inspecting of a gate line into an odd and an even gate shorting line is provided.
Public/Granted literature
- US20100279473A1 THIN FILM TRANSISTOR SUBSTRATE AND FABRICATING METHOD THEREOF Public/Granted day:2010-11-04
Information query
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