Invention Grant
US08013977B2 Lithographic apparatus, radiation sensor and method of manufacturing a radiation sensor
有权
光刻设备,辐射传感器和辐射传感器的制造方法
- Patent Title: Lithographic apparatus, radiation sensor and method of manufacturing a radiation sensor
- Patent Title (中): 光刻设备,辐射传感器和辐射传感器的制造方法
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Application No.: US11487607Application Date: 2006-07-17
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Publication No.: US08013977B2Publication Date: 2011-09-06
- Inventor: Haico Victor Kok , Arie Johan Van Der Sijs
- Applicant: Haico Victor Kok , Arie Johan Van Der Sijs
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: G03B27/42
- IPC: G03B27/42

Abstract:
A radiation sensor includes a radiation receiver positioned in a focal plane of the final element of the projection system; a transmissive plate supporting the radiation receiver at a side facing the projection system; a quantum conversion layer to absorb light at the first wavelength incident on the transmissive plate and reradiate light at a second wavelength; a fiber optics block with a plurality of optical fibers; and a radiation detector. In the radiation sensor, the plurality of optical fibers guide light is reradiated by the quantum conversion layer towards the radiation detector. The radiation sensor can be used as a substrate-level sensor in a lithographic apparatus.
Public/Granted literature
- US20080013059A1 Lithographic apparatus, radiation sensor and method of manufacturing a radiation sensor Public/Granted day:2008-01-17
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