Invention Grant
- Patent Title: Low forward voltage drop transient voltage suppressor and method of fabricating
-
Application No.: US11820547Application Date: 2007-06-20
-
Publication No.: US08014117B2Publication Date: 2011-09-06
- Inventor: Lung-Ching Kao , Pu-Ju Kung , Yu-Ju Yu
- Applicant: Lung-Ching Kao , Pu-Ju Kung , Yu-Ju Yu
- Applicant Address: US NY Hauppauge
- Assignee: Vishay General Semiconductor, LLC
- Current Assignee: Vishay General Semiconductor, LLC
- Current Assignee Address: US NY Hauppauge
- Agency: Volpe and Koenig, P.C.
- Main IPC: H02H3/22
- IPC: H02H3/22 ; H02H3/20 ; H02H9/04

Abstract:
A low forward voltage drop transient voltage suppressor utilizes a low-reverse-voltage-rated PN diode electrically connected in parallel to a high-reverse-voltage-rated Schottky rectifier in a single integrated circuit device. The transient voltage suppressor is ideally suited to fix the problem of high forward voltage drop of PN diodes and high leakage of low reverse breakdown of Schottky rectifiers. The low-reverse-voltage PN rectifier can be fabricated through methods such as 1) double layers of epi (with higher concentration layer epi in the bottom) or 2) punch through design of PN diode by base with compression.
Public/Granted literature
- US08111495B2 Low forward voltage drop transient voltage suppressor and method of fabricating Public/Granted day:2012-02-07
Information query