Invention Grant
US08014188B2 Electric element, switching element, memory element, switching method and memory method
有权
电气元件，开关元件，存储元件，开关方法和存储器方法
- Patent Title: Electric element, switching element, memory element, switching method and memory method
- Patent Title (中): 电气元件，开关元件，存储元件，开关方法和存储器方法
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Application No.: US12408072Application Date: 2009-03-20
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Publication No.: US08014188B2Publication Date: 2011-09-06
- Inventor: Yumiko Oyasato , Hideyuki Nishizawa , Kenji Sano
- Applicant: Yumiko Oyasato , Hideyuki Nishizawa , Kenji Sano
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-294112 20081118
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
An electric element includes a pair of electrodes; and a plurality of carbon nanotubes of three-dimensional network structure which are located between the pair of electrodes. The electric element can be applied for a memory element and the like.
Public/Granted literature
- US20100124096A1 ELECTRIC ELEMENT, SWITCHING ELEMENT, MEMORY ELEMENT, SWITCHING METHOD AND MEMORY METHOD Public/Granted day:2010-05-20
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