Invention Grant
- Patent Title: Single transistor memory cell
- Patent Title (中): 单晶体管存储单元
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Application No.: US12367154Application Date: 2009-02-06
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Publication No.: US08014195B2Publication Date: 2011-09-06
- Inventor: Serguei Okhonin , Mikhail Nagoga
- Applicant: Serguei Okhonin , Mikhail Nagoga
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Hunton & Williams LLP
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
A semiconductor device along with circuits including the same and methods of operating the same are described. The device comprises a memory cell including one transistor. The transistor comprises a gate, an electrically floating body region, and a source region and a drain region adjacent the body region. Data stored in memory cells of the device is inherently refreshed during hold operations.
Public/Granted literature
- US20090201723A1 Single Transistor Memory Cell Public/Granted day:2009-08-13
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