Invention Grant
US08014195B2 Single transistor memory cell 有权
单晶体管存储单元

Single transistor memory cell
Abstract:
A semiconductor device along with circuits including the same and methods of operating the same are described. The device comprises a memory cell including one transistor. The transistor comprises a gate, an electrically floating body region, and a source region and a drain region adjacent the body region. Data stored in memory cells of the device is inherently refreshed during hold operations.
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