Invention Grant
- Patent Title: Programming and selectively erasing non-volatile storage
- Patent Title (中): 编程和选择性擦除非易失性存储
-
Application No.: US12167135Application Date: 2008-07-02
-
Publication No.: US08014209B2Publication Date: 2011-09-06
- Inventor: Jeffrey W Lutze , Yan Li
- Applicant: Jeffrey W Lutze , Yan Li
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Vierra Magen Marcus & DeNiro LLP
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
A non-volatile storage system performs programming for a plurality of non-volatile storage elements and selectively performs re-erasing of at least a subset of the non-volatile storage elements that were supposed to remain erased, without intentionally erasing programmed data.
Public/Granted literature
- US20100002515A1 Programming And Selectively Erasing Non-Volatile Storage Public/Granted day:2010-01-07
Information query
