Disclosed is a memory circuit that includes a plurality of columns of bit line pairs, each bit line pair including True and Bar bit lines, between which at least a memory cell is connected; a sense amplifier that has True and Bar terminals and that performs differential amplification; and a switching circuit that selects one of: a straight connection in which the True and Bar bit lines of a selected column bit line pair are connected to the True and Bar terminals of the sense amplifier, respectively; and a cross connection in which the True and Bar bit lines of a selected column bit line pair are connected to the Bar and True terminals of the sense amplifier, respectively.