Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12199913Application Date: 2008-08-28
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Publication No.: US08014223B2Publication Date: 2011-09-06
- Inventor: Atsushi Kaneko , Yasuo Okada
- Applicant: Atsushi Kaneko , Yasuo Okada
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-220507 20070828
- Main IPC: G11C17/18
- IPC: G11C17/18

Abstract:
A semiconductor device including a plurality of semiconductor elements, a substrate on which the plurality of semiconductor elements are mounted, the substrate also having a plurality of terminals for connecting to external equipment, a fuse mounted on the outside of a mounting area of the plurality of semiconductor elements and mounted on a surface of the substrate near a power supply terminal among the plurality of terminals, and the power supply terminal and the plurality of semiconductor elements are connected via the fuse.
Public/Granted literature
- US20090057723A1 SEMICONDUCTOR DEVICE Public/Granted day:2009-03-05
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