Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12201024Application Date: 2008-08-29
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Publication No.: US08014224B2Publication Date: 2011-09-06
- Inventor: Kenji Yoshinaga , Fukashi Morishita
- Applicant: Kenji Yoshinaga , Fukashi Morishita
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: JP2005-253508 20050901
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
There is provided a semiconductor device supplied with internal power generated by an internal power generation circuit to perform a stable operation and, also, suppress power consumption. A control circuit, a row/column decoder and a sense amplifier are driven by an internal buck voltage. On the other hand, a data path with high power consumption is driven by an external power supply voltage. A level conversion circuit receives an address signal or a command signal having a voltage level of the external power supply voltage, converts the voltage level to the internal buck voltage, and outputs a resultant signal to the control circuit. A level conversion circuit receives a control signal having a voltage level of the internal buck voltage from the control circuit, converts the voltage level to the external power supply voltage, and outputs a resultant signal to the data path.
Public/Granted literature
- US20090003091A1 Semiconductor Device Public/Granted day:2009-01-01
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