Invention Grant
US08014225B2 Circuit for voltage pump and a semiconductor memory apparatus using the same 失效
电压泵电路及使用其的半导体存储装置

  • Patent Title: Circuit for voltage pump and a semiconductor memory apparatus using the same
  • Patent Title (中): 电压泵电路及使用其的半导体存储装置
  • Application No.: US12476512
    Application Date: 2009-06-02
  • Publication No.: US08014225B2
    Publication Date: 2011-09-06
  • Inventor: Young Jo Ko
  • Applicant: Young Jo Ko
  • Applicant Address: KR Gyeonggi-do
  • Assignee: Hynix Semiconductor Inc.
  • Current Assignee: Hynix Semiconductor Inc.
  • Current Assignee Address: KR Gyeonggi-do
  • Agency: IP & T Group LLP
  • Priority: KR10-2008-0136387 20081230
  • Main IPC: G11C5/14
  • IPC: G11C5/14
Circuit for voltage pump and a semiconductor memory apparatus using the same
Abstract:
A voltage pump circuit includes a pumping unit configured to include a plurality of pumps and perform voltage pumping and a pumping control unit configured to generate control signals for selectively driving the pumps in response to a mode determination signal.
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