Invention Grant
- Patent Title: Electrical contacts on top of waveguide structures for efficient optical modulation in silicon photonic devices
- Patent Title (中): 波导结构顶部的电触点用于硅光子器件中的有效光调制
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Application No.: US12389608Application Date: 2009-02-20
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Publication No.: US08014636B2Publication Date: 2011-09-06
- Inventor: Ivan Shubin , Guoliang Li , John E. Cunningham , Ashok Krishnamoorthy , Xuezhe Zheng
- Applicant: Ivan Shubin , Guoliang Li , John E. Cunningham , Ashok Krishnamoorthy , Xuezhe Zheng
- Applicant Address: US CA Redwood City
- Assignee: Oracle America
- Current Assignee: Oracle America
- Current Assignee Address: US CA Redwood City
- Agency: Osha · Liang LLP
- Main IPC: G02F1/035
- IPC: G02F1/035 ; H01L29/06 ; H04B10/04

Abstract:
A phase modulation waveguide structure includes one of a semiconductor and a semiconductor-on-insulator substrate, a doped semiconductor layer formed over the one of a semiconductor and a semiconductor-on-insulator substrate, the doped semiconductor portion including a waveguide rib protruding from a surface thereof not in contact with the one of a semiconductor and a semiconductor-on-insulator substrate, and an electrical contact on top of the waveguide rib. The electrical contact is formed of a material with an optical refractive index close to that of a surrounding oxide layer that surrounds the waveguide rib and the electrical contact and lower than the optical refractive index of the doped semiconductor layer. During propagation of an optical mode within the waveguide structure, the electrical contact isolates the optical mode between the doped semiconductor layer and a metal electrode contact on top of the electrical contact.
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