Invention Grant
- Patent Title: Etching amount calculating method, storage medium, and etching amount calculating apparatus
- Patent Title (中): 蚀刻量计算方法,存储介质和蚀刻量计算装置
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Application No.: US12353457Application Date: 2009-01-14
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Publication No.: US08014891B2Publication Date: 2011-09-06
- Inventor: Susumu Saito
- Applicant: Susumu Saito
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-008312 20080117; JP2008-192311 20080725
- Main IPC: G06F19/00
- IPC: G06F19/00 ; G01L21/30 ; C23F1/00 ; G01B9/02

Abstract:
An etching amount calculating method that can stably and accurately calculate the amount of etching even if a disturbance is added. Superposed interference light resulting from superposition of interference light of reflected light from a mask film and reflected light from the bottom of a concave portion on other interference light is received. A waveform in a predetermined time period is extracted from a superposed interference wave calculated from the superposed interference light. The period of an interference wave of the reflected light from the mask film and the reflected light from the bottom is detected from the distribution of frequencies of the extracted waveform. The steps described above are repeated while shifting the predetermined time period by a predetermined time, and the detected periods are integrated and averaged at each repetition. The etching amount of the concave portion is calculated based on the integrated and averaged periods.
Public/Granted literature
- US20090186483A1 ETCHING AMOUNT CALCULATING METHOD, STORAGE MEDIUM, AND ETCHING AMOUNT CALCULATING APPARATUS Public/Granted day:2009-07-23
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