Invention Grant
- Patent Title: System and method for using first-principles simulation to characterize a semiconductor manufacturing process
- Patent Title (中): 使用第一原理模拟来表征半导体制造工艺的系统和方法
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Application No.: US10673501Application Date: 2003-09-30
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Publication No.: US08014991B2Publication Date: 2011-09-06
- Inventor: Andrej S. Mitrovic , Eric J. Strang
- Applicant: Andrej S. Mitrovic , Eric J. Strang
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G06F19/00 ; G06G7/48 ; H01L21/00

Abstract:
A method, system and computer readable medium for facilitating a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool, and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is then performed using the input data and the physical model to provide a simulation result for the process performed by the semiconductor processing tool, and the simulation result is used as part of a data set that characterizes the process performed by the semiconductor processing tool.
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