Invention Grant
- Patent Title: Method of compensating for propagation delay of tri-state bidirectional bus in a semiconductor device
- Patent Title (中): 补偿半导体器件中三态双向总线传播延迟的方法
-
Application No.: US11949176Application Date: 2007-12-03
-
Publication No.: US08015336B2Publication Date: 2011-09-06
- Inventor: Jae-kwan Kim
- Applicant: Jae-kwan Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2007-0001691 20070105
- Main IPC: G06F13/00
- IPC: G06F13/00

Abstract:
A semiconductor device for detecting and compensating for a propagation delay of a tri-state bidirectional bus connected between a master block and a plurality of slave blocks. The master block controls the slave blocks. A bidirectional bus connects the master block and each of the slave blocks and accommodates transmission of data therebetween. A unidirectional bus is connected between the master block and each of the slave blocks. The unidirectional bus accommodates the transmission of control signals generated in the master block to the slave blocks wherein the master block detects a propagation delay time between the master block and the slave blocks. The master block counts the number of clocks from a time when a selected slave block transmits an allocated symbol to a time when the allocated symbol reaches the master block such that a propagation delay time between the master block and the selected slave block is detected and stored.
Public/Granted literature
- US20080168200A1 METHOD OF COMPENSATING FOR PROPAGATION DELAY OF TRI-STATE BIDIRECTIONAL BUS IN A SEMICONDUCTOR DEVICE Public/Granted day:2008-07-10
Information query