Invention Grant
- Patent Title: Optimized flash memory access method and device
- Patent Title (中): 优化闪存存取方式和设备
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Application No.: US11787101Application Date: 2007-04-13
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Publication No.: US08015345B2Publication Date: 2011-09-06
- Inventor: Christophe Laurent , Andrea Martinelli , Stefan Schippers , Graziano Mirichigni
- Applicant: Christophe Laurent , Andrea Martinelli , Stefan Schippers , Graziano Mirichigni
- Agency: Trop, Pruner & Hu, P.C.
- Priority: ITMI2006A0746 20060413
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
A method for accessing a non volatile memory device including at least one group or sector of memory cells divided into regions programmable with two different data storage densities and accessible with at least two reading modes, for example a two-level mode and a multilevel mode. The memory regions are being organized into pages including a sub-group of memory cells for storing error correction codes of the data stored in the multilevel mode. The method includes providing at the beginning of each page at least one first cell wherein the information concerning the ECC protection or not of the whole page is to be stored. In the sub-group of cells at least one second cell intended for the storage of information concerning the programmed or erased state of the same page is provided. The content of the first and of the second cell is read before accessing, in programming, the corresponding page of the memory region.
Public/Granted literature
- US20070283082A1 Optimized flash memory access method and device Public/Granted day:2007-12-06
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