Invention Grant
US08015438B2 Memory circuit 有权
存储电路

Memory circuit
Abstract:
The invention provides a memory circuit comprising a plurality of storage cells for storing data and redundant spare storage cells for replacing defective storage cells, and a memory access logic for accessing said storage cells connected to a replacement setting register which is writeable during operation of said memory circuit to store replacement settings.
Public/Granted literature
Information query
Patent Agency Ranking
0/0