Invention Grant
- Patent Title: Structures for electrostatic discharge protection for bipolar semiconductor circuitry
- Patent Title (中): 双极半导体电路的静电放电保护结构
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Application No.: US12108165Application Date: 2008-04-23
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Publication No.: US08015518B2Publication Date: 2011-09-06
- Inventor: Steven H. Voldman
- Applicant: Steven H. Voldman
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Richard M. Kotulak, Esq.
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G06F19/455 ; H01L23/62

Abstract:
A design structure for electrostatic discharge protection comprises a first data representing a first electrostatic discharge (ESD) protection circuit and a second data representing a second ESD protection circuit. A parallel connection of two ESD protection units, each providing a discharge path for electrical charges of opposite types, provides ESD protection circuit for positive and negative voltage swings in the circuit. Each of the multiple emitter-base regions are cascaded such that the base of one emitter-base region is directly wired to the emitter of an adjacent emitter-base region. The first data represents a first ESD protection unit providing protection on one type of voltage swing, and the second data represents a second ESD protection unit providing protection on the other type of voltage swing.
Public/Granted literature
- US20090154037A1 DESIGN STRUCTURES FOR ELECTROSTATIC DISCHARGE PROTECTION FOR BIPOLAR SEMICONDUCTOR CIRCUITRY Public/Granted day:2009-06-18
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