Invention Grant
US08015518B2 Structures for electrostatic discharge protection for bipolar semiconductor circuitry 有权
双极半导体电路的静电放电保护结构

Structures for electrostatic discharge protection for bipolar semiconductor circuitry
Abstract:
A design structure for electrostatic discharge protection comprises a first data representing a first electrostatic discharge (ESD) protection circuit and a second data representing a second ESD protection circuit. A parallel connection of two ESD protection units, each providing a discharge path for electrical charges of opposite types, provides ESD protection circuit for positive and negative voltage swings in the circuit. Each of the multiple emitter-base regions are cascaded such that the base of one emitter-base region is directly wired to the emitter of an adjacent emitter-base region. The first data represents a first ESD protection unit providing protection on one type of voltage swing, and the second data represents a second ESD protection unit providing protection on the other type of voltage swing.
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