Invention Grant
- Patent Title: Sensor device and method for fabricating sensor device
- Patent Title (中): 传感器装置及其制造方法
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Application No.: US12073199Application Date: 2008-03-03
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Publication No.: US08015875B2Publication Date: 2011-09-13
- Inventor: Akihiko Nomura
- Applicant: Akihiko Nomura
- Applicant Address: JP Tokyo
- Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Rabin & Berdo, PC
- Priority: JP2007-059275 20070308
- Main IPC: G01P15/12
- IPC: G01P15/12
Abstract:
The sensor device includes a dead-weight portion, a frame portion disposed so as to surround the dead-weight portion, a supporting portion provided at the frame portion via a first insulating layer, a mass portion provided at the dead-weight portion via a second insulating layer, a beam portion connecting the supporting and mass portions, a first concave portion, and a second concave portion, wherein a depth of the first or second concave portion is from 3.3% or more to 5.0% or less of the width of the frame portion.
Public/Granted literature
- US20080216574A1 Sensor device and method for fabricating sensor device Public/Granted day:2008-09-11
Information query
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