Invention Grant
- Patent Title: Film forming method, discharging droplet method and droplet discharging device
- Patent Title (中): 成膜方法,放电液滴法和液滴喷射装置
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Application No.: US11889683Application Date: 2007-08-15
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Publication No.: US08017186B2Publication Date: 2011-09-13
- Inventor: Gen Fujii
- Applicant: Gen Fujii
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2006-222722 20060817
- Main IPC: B05B1/02
- IPC: B05B1/02 ; B41J2/135

Abstract:
The present invention provides film forming method and a droplet discharge method for removing bubbles in a pressurizing chamber to prevent defective discharge without disposing a large amount of materials in a droplet discharging device. Before a material is discharged in the droplet discharging device, a step is provided in which reduced pressure is kept in a pressurizing chamber and a material supply portion, which are connected, to remove bubbles that exist in the pressurizing chamber. A flow path connected to the outside such as an opening of a nozzle surface of the pressurizing chamber or a material supply port of the material supply portion is sealed, and pressure in the pressurizing chamber and the material supply portion is reduced from an inlet and outlet connected to the material supply portion with the use of a reduced pressure means such as a pump.
Public/Granted literature
- US20080041973A1 Film forming method, discharging droplet method and droplet discharging device Public/Granted day:2008-02-21
Information query
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