Invention Grant
US08017304B2 Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
有权
图案形成方法，图案形成方法中使用的抗蚀剂组合物，显影剂和漂洗溶液
- Patent Title: Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
- Patent Title (中): 图案形成方法，图案形成方法中使用的抗蚀剂组合物，显影剂和漂洗溶液
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Application No.: US12578520Application Date: 2009-10-13
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Publication No.: US08017304B2Publication Date: 2011-09-13
- Inventor: Shinji Tarutani , Hideaki Tsubaki , Kazuyoshi Mizutani , Kenji Wada , Wataru Hoshino
- Applicant: Shinji Tarutani , Hideaki Tsubaki , Kazuyoshi Mizutani , Kenji Wada , Wataru Hoshino
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JPP2007-106175 20070413; JPP2007-198054 20070730
- Main IPC: G03F7/00
- IPC: G03F7/00 ; G03F7/32 ; G03F7/004 ; G03F7/20
Abstract:
A pattern forming method comprising a step of applying a resist composition whose solubility in a negative tone developer decreases upon irradiation with an actinic ray or radiation and which contains a resin having an alicyclic hydrocarbon structure and a dispersity of 1.7 or less and being capable of increasing the polarity by the action of an acid, an exposure step, and a development step using a negative tone developer; a resist composition for use in the method; and a developer and a rinsing solution for use in the method, are provided, whereby a pattern with reduced line edge roughness and high dimensional uniformity can be formed.
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