Invention Grant
- Patent Title: Semiconductor image sensor and method for fabricating the same
- Patent Title (中): 半导体图像传感器及其制造方法
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Application No.: US12717513Application Date: 2010-03-04
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Publication No.: US08017418B2Publication Date: 2011-09-13
- Inventor: Masanori Minamio , Toshiyuki Fukuda
- Applicant: Masanori Minamio , Toshiyuki Fukuda
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2005-225621 20050803
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A semiconductor image sensor includes: a semiconductor imaging element including an imaging area, a peripheral circuit area, and an electrode area; cylindrical electrodes provided on electrode terminals so as to be electrically connected with an external device; and a transparent resin layer provided on the upper surface of the semiconductor imaging element. The upper surface of each cylindrical electrode and the upper surface of the transparent resin layer are substantially of the same height.
Public/Granted literature
- US20100190287A1 SEMICONDUCTOR IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME Public/Granted day:2010-07-29
Information query
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