Invention Grant
- Patent Title: Method for forming pattern, method for manufacturing light emitting device, and light emitting device
- Patent Title (中): 形成图案的方法,制造发光器件的方法和发光器件
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Application No.: US12135252Application Date: 2008-06-09
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Publication No.: US08017422B2Publication Date: 2011-09-13
- Inventor: Gen Fujii , Erika Takahashi
- Applicant: Gen Fujii , Erika Takahashi
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2007-160895 20070619
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
Oxidation treatment is performed to the surface of a substrate provided with a photocatalytic conductive film and an insulating film; treatment with a silane coupling agent is performed, so that a silane coupling agent film is formed and the surface of the substrate is modified to be liquid-repellent; and the surface of the substrate is irradiated with light of a wavelength (less than to equal to 390 nm) which has energy of greater than or equal to a band gap of a material for forming the photocatalytic conductive film, so that only the silane coupling agent film over the surface of the photocatalytic conductive film is decomposed and the surface of the photocatalytic conductive film can be modified to be lyophilic.
Public/Granted literature
- US20090008667A1 METHOD FOR FORMING PATTERN, METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE, AND LIGHT EMITTING DEVICE Public/Granted day:2009-01-08
Information query
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