Invention Grant
US08017661B2 Inorganic anion exchanger composed of bismuth compound and resin composition for electronic component encapsulation using the same
有权
由铋化合物组成的无机阴离子交换剂和使用其的电子元件封装的树脂组合物
- Patent Title: Inorganic anion exchanger composed of bismuth compound and resin composition for electronic component encapsulation using the same
- Patent Title (中): 由铋化合物组成的无机阴离子交换剂和使用其的电子元件封装的树脂组合物
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Application No.: US12312633Application Date: 2007-11-16
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Publication No.: US08017661B2Publication Date: 2011-09-13
- Inventor: Yasuharu Ono
- Applicant: Yasuharu Ono
- Applicant Address: JP Tokyo
- Assignee: Toagosei Co., Ltd.
- Current Assignee: Toagosei Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Fitch, Even, Tabin & Flannery
- Priority: JP2006312421 20061120
- International Application: PCT/JP2007/072265 WO 20071116
- International Announcement: WO2008/062723 WO 20080529
- Main IPC: H01B1/02
- IPC: H01B1/02 ; C09D1/00 ; C09J1/00
Abstract:
A bismuth compound, useful as an inorganic anion exchanger used for an encapsulating material for, e.g., semiconductors, has a peak intensity of 900 to 2000 cps at 2θ=27.9° to 28.1° and a peak intensity of 100 to 800 cps at 2θ=8.45° to 8.55° in a powder X-ray diffraction pattern, and is represented by the following formula (1): Bi(OH)x(NO3)y.nH2O (1) wherein x is a positive number not less than 2.5 and less than 3, y is a positive number not more than 0.5, x+y=3, and n is 0 or a positive number.
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