Invention Grant
- Patent Title: Semiconductor device and method
- Patent Title (中): 半导体器件及方法
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Application No.: US12277894Application Date: 2008-11-25
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Publication No.: US08017942B2Publication Date: 2011-09-13
- Inventor: Franco Mariani , Werner Kroeninger , Adolf Koller , Horst Theuss , Jens Arkenau
- Applicant: Franco Mariani , Werner Kroeninger , Adolf Koller , Horst Theuss , Jens Arkenau
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L29/10
Abstract:
A semiconductor device and method. One embodiment provides a semiconductor substrate having a plurality of cut regions. A metal layer is located within a cut region. The metal layer includes a recess, the recess having a slit-like shape.
Public/Granted literature
- US20100127355A1 SEMICONDUCTOR DEVICE AND METHOD Public/Granted day:2010-05-27
Information query
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