Invention Grant
- Patent Title: Semiconductor device with reduced pad pitch
- Patent Title (中): 具有减小焊盘间距的半导体器件
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Application No.: US12697626Application Date: 2010-02-01
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Publication No.: US08017943B2Publication Date: 2011-09-13
- Inventor: Tsukasa Ojiro
- Applicant: Tsukasa Ojiro
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2006-192606 20060713
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/58 ; G01R31/28 ; G01R31/26 ; G01R31/3185 ; H03K19/00 ; H05K7/00
Abstract:
A semiconductor device includes a first pad, a second pad and a third pad. The first pad and the third pad are electrically connected to each other. The first pad and the second pad are used for bonding. The second pad and the third pad are used for probing. According to this structure, Small size semiconductor device having high reliability even after a probing test can be provided.
Public/Granted literature
- US20100133535A1 SEMICONDUCTOR DEVICE WITH REDUCED PAD PITCH Public/Granted day:2010-06-03
Information query
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