Invention Grant
- Patent Title: Semiconductor light-emitting element and semiconductor light-emitting device
- Patent Title (中): 半导体发光元件和半导体发光元件
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Application No.: US12027544Application Date: 2008-02-07
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Publication No.: US08017954B2Publication Date: 2011-09-13
- Inventor: Chisato Furukawa , Takafumi Nakamura
- Applicant: Chisato Furukawa , Takafumi Nakamura
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Priority: JP2007-029327 20070208
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01S5/00

Abstract:
According to an aspect of the invention, there is provided a semiconductor light-emitting element including a substrate, a first stripe, the first stripe including a first n-type clad layer, a first active layer and a first p-type clad layer on the substrate and a second stripe, the second stripe being formed on the substrate and having a different direction for the first stripe direction, the second stripe including a second n-type clad layer, a second active layer and a second p-type clad layer, the second n-type clad layer, the second active layer and the second p-type clad layer substantially being identical with the first n-type clad layer, the first active-layer and the first p-type clad layer, respectively.
Public/Granted literature
- US20080192791A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SEMICONDUCTOR LIGHT-EMITTING DEVICE Public/Granted day:2008-08-14
Information query
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