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US08017960B2 Infrared emitting diode and method of its manufacture 有权
红外发射二极管及其制造方法

Infrared emitting diode and method of its manufacture
Abstract:
An infrared emitting diode that can be utilized as a high power and rapidly responsive infrared light source for both infrared and remote control communications is disclosed which comprises at least one p-type clad layer containing AlxGa1-xAs of p type where 0.15≦x≦0.45, an active layer containing AlyGa1-yAs of p type where 0≦y≦0.01 and at least one n-type clad layer containing AlzGa1-zAs where 0.15≦z≦0.45 wherein said active layer has a thickness of 2 to 6 μm and which has an emission peak wavelength of 880 to 890 nm at room temperature.
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