Invention Grant
- Patent Title: Infrared emitting diode and method of its manufacture
- Patent Title (中): 红外发射二极管及其制造方法
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Application No.: US11813321Application Date: 2005-12-26
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Publication No.: US08017960B2Publication Date: 2011-09-13
- Inventor: Haruhiko Watanabe , Yoshinori Kurosawa , Takashi Araki
- Applicant: Haruhiko Watanabe , Yoshinori Kurosawa , Takashi Araki
- Applicant Address: JP Tokyo
- Assignee: Dowa Electronics Materials Co., Ltd.
- Current Assignee: Dowa Electronics Materials Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Chen Yoshimura LLP
- Priority: JP2005-001018 20050105
- International Application: PCT/JP2005/023749 WO 20051226
- International Announcement: WO2006/073077 WO 20060713
- Main IPC: H01L29/22
- IPC: H01L29/22 ; H01L29/227

Abstract:
An infrared emitting diode that can be utilized as a high power and rapidly responsive infrared light source for both infrared and remote control communications is disclosed which comprises at least one p-type clad layer containing AlxGa1-xAs of p type where 0.15≦x≦0.45, an active layer containing AlyGa1-yAs of p type where 0≦y≦0.01 and at least one n-type clad layer containing AlzGa1-zAs where 0.15≦z≦0.45 wherein said active layer has a thickness of 2 to 6 μm and which has an emission peak wavelength of 880 to 890 nm at room temperature.
Public/Granted literature
- US20090008658A1 Infrared Emitting Diode and Method of Its Manufacture Public/Granted day:2009-01-08
Information query
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